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论文类型：期刊论文

发表时间：2010-11-30

发表刊物：MATERIALS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：64

期号：22

页面范围：2475-2478

ISSN号：0167-577X

关键字：Cu2O; Galvanic deposition; Semiconductor; Solar energy materials; Octahedral

摘要：A simple galvanic deposition technique has been developed to demonstrate the deposition of cuprous oxide (Cu2O) on transparent conducting oxide substrate for the first time. The result shows that the morphologies of galvanically obtained Cu2O crystals are mainly dependent on the nature of anions in aqueous solution. The presence of NO3-T ions tends to increase the stability of (111) planes of Cu2O cubes and makes the crystals develop a fraction of (111) planes at the corners of the Cu2O cubes. thus resulting in the formation of truncated octahedral Cu2O crystals. (C) 2010 Elsevier B V All lights reserved