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Indexed by:期刊论文

Date of Publication:2014-12-01

Journal:SOLAR ENERGY

Included Journals:SCIE、EI、Scopus

Volume:110

Page Number:714-719

ISSN No.:0038-092X

Key Words:Black silicon; Solar cell; Doping concentration; Carrier recombination

Abstract:17.3% efficient black silicon (b-Si) solar cell without antireflection coating was achieved via tetramethylammonium hydroxide (TMAH) etching after the formation of the diffusion emitter. Large area (156 x 156 mm(2)) b-Si wafers were prepared by silver-nanoparticle-assisted etching on pyramid-structured silicon wafers. The modification of nanostructures of silicon surface by TMAH etching suppresses the surface recombination and Auger recombination at and near the emitter surface, and the effective minority carrier lifetime of the b-Si solar cells was improved from 10.7 mu s to 20.8 mu s. Although the average reflectance of the b-Si solar cell slightly increases from 2.38% to 2.71% via the process of TMAH etching, it is a small loss compared with the beneficial impact of the improvement of the carrier recombination lifetime. As a result, the internal quantum efficiency at short wavelength region was improved through the TMAH etch treatment, which was a main limiting factor for the efficiency of b-Si solar cells. (C) 2014 Elsevier Ltd. All rights reserved.