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发表时间:2022-10-02
发表刊物:JOURNAL OF PHYSICS CONDENSED MATTER
卷号:22
期号:34
ISSN号:0953-8984
上一条:Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties
下一条:Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO(2 )films formed by reactive sputtering