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Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO(2 )films formed by reactive sputtering

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发表时间：2022-10-02

发表刊物：CERAMICS INTERNATIONAL

卷号：44

期号：11

页面范围：12841-12846

ISSN号：0272-8842

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