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发表时间:2022-10-02
发表刊物:Rare Metals
卷号:31
期号:2
页面范围:193-197
ISSN号:1001-0521
上一条:Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO(2 )films formed by reactive sputtering
下一条:EFFECT OF NITROGEN-DOPED CONCENTRATION ON THE TCR OF ITO THIN FILMS AT HIGH TEMPERATURE