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发表时间：2022-10-06

发表刊物：真空科学与技术学报

期号：1

页面范围：26-30

ISSN号：1672-7126

摘要：The SiCN films were deposited by microwave cyclotron resonance (ECR) plasma enhanced unbalance magnetron sputtering on Si substrates. The microstructures and properties of the films were characterized with X-ray photo-electron spectroscopy (XPS), scanning electron microscopy (SEM) and ellipsometry spectroscopy. The results show that the RF sputtering power of Si target determines the O impurity density, and that the 0 density and its chemical bonding mode strongly affect the stoichiometrics, microstructures and mechanical properties of the. films. At the lowest power of 100W, the maximum O density was found to be 10.63% and Si-C bonds dominated, possibly because of the chemical adsorption of the loose structures of the films. At a high sputtering power, high than 250W, the 0 density was lower than 4%, and C-O bonds were predominant and fairly compact SiCN films, with a hardness of 29.1GPa and a reflective index of 2.43, were grown.

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