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发表时间：2022-10-06

发表刊物：物理化学学报

卷号：26

期号：8

页面范围：2311-2316

ISSN号：1000-6818

摘要：Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering with a silicon target and CH4 as Si and C sources, respectively. The influence of CH4 flow rate and the deposition temperature on the chemical structure, stoichiometry, and hardness were investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and nano. indentation. The results indicated that, as the CH4 flow rate increased from 5 to 45 cm(3).min(-1) (standard state), the amount of Si-CH2 groups and C-H groups increased constantly, but the number of Si-H groups did not change. The atomic concentration of C increases from 28% to 76% while Si decreases from 62% to 19%. The amount of Si-H and C-H groups in the deposited films decreases dramatically while the Si-C bonds and the hardness of the resultant films increase with an increase in deposition temperature at a constant CH4 flow rate. The atomic concentrations of Si and C remain almost constant at about 52% and 43%, respectively. The hardness of the deposited films with a constant CH4 flow rate of 15 cm(3).min(-1) increases to 29.7 GPa at a deposition temperature of 600 degrees C. We propose a growth mechanism for the a. Si1-xCx:H films at room temperature (25 degrees C) and at high temperature based on the characterization results.

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