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发表时间：2022-10-06

发表刊物：真空科学与技术学报

期号：6

页面范围：526-529

ISSN号：1672-7126

摘要：Silicon carbonitride (SiCN) films were prepared by microwave electron cyclotron resonance (ECR) plasma enhanced unbalance magnetron sputtering. The influence of carbon content on the chemical structures, optical as well as mechanical properties of the deposited SiCN films were characterized with Fourier transform infrared spectroscopy (FT-IR) X-ray photoelectron spectroscopy (XPS), and Nano-indentation. The results indicate that as the carbon target sputtering voltage decrease from-450 V to-650 V, the carbon content in the films increases from 19.0% to 27.1%, while the hardness reaches to the maximum of 25.35 GPa when the carbon target sputtering voltage is-600 V.

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