点击次数：

论文类型：期刊论文

发表时间：2009-07-20

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：95

期号：3

ISSN号：0003-6951

关键字：diamagnetic materials; ferromagnetic materials; ferromagnetic-paramagnetic transitions; II-VI semiconductors; magnetic semiconductors; magnetic thin films; manganese; paramagnetic materials; semiconductor doping; semiconductor thin films; spontaneous magnetisation; sputter deposition; zinc compounds

摘要：We report a systematic study of the film thickness dependence (0.1-1 mu m) of room-temperature ferromagnetism in pure magnetron-sputtered ZnO thin films wherein a sequential transition from ferromagnetism to paramagnetism and diamagnetism as a function of film thickness is observed. The highest saturation magnetization (M(S)) value observed is 0.62 emu/g (0.018 mu(B)/unit cell) for a similar to 480 nm film. On doping the ZnO film with 1 at. % Mn enhances the M(S) value by 26%. The ferromagnetic order in ZnO matrix is believed to be defect induced. In addition, on doping with Mn hybridization between the 2p states of O and the 3d states of Mn occurs.