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论文类型：期刊论文

发表时间：2013-06-01

发表刊物：VACUUM

收录刊物：SCIE、EI

卷号：92

页面范围：77-80

ISSN号：0042-207X

关键字：GaN films; ITO substrates; ECR-PEMOCVD; Low-temperature synthesis

摘要：GaN films were deposited on indium tin oxide (ITO) coated glass substrates at various deposition temperatures using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N-2 are applied as precursors of Ga and N, respectively. The crystalline quality and photoluminescence properties of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and room temperature photoluminescence (PL). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on ITO glass substrates under optimized deposition temperature of 430 degrees C, and the room temperature PL spectra of the optimized GaN film show an intense near-band-edge luminescence located at 360 nm. The obtained GaN/ITO/glass structure was especially attractive for transparent optoelectronics applications with inexpensive ITO/glass substrate. (C) 2012 Elsevier Ltd. All rights reserved.