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    亢战

    • 教授     博士生导师   硕士生导师
    • 主要任职:Deputy Dean, Faculty of Vehicle Engineering and Mechanics
    • 其他任职:Deputy Dean, Faculty of Vehicle Engineering and Mechanics
    • 性别:男
    • 毕业院校:stuttgart大学
    • 学位:博士
    • 所在单位:力学与航空航天学院
    • 学科:工程力学. 计算力学. 航空航天力学与工程. 固体力学
    • 办公地点:综合实验一号楼522房间
      https://orcid.org/0000-0001-6652-7831
      http://www.ideasdut.com
      https://scholar.google.com/citations?user=PwlauJAAAAAJ&hl=zh-CN&oi=ao
    • 联系方式:zhankang#dlut.edu.cn 84706067
    • 电子邮箱:zhankang@dlut.edu.cn

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    A molecular dynamics study on tensile strength and failure modes of carbon nanotube junctions

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    论文类型:期刊论文

    发表时间:2013-12-11

    发表刊物:JOURNAL OF PHYSICS D-APPLIED PHYSICS

    收录刊物:SCIE、EI、Scopus

    卷号:46

    期号:49

    ISSN号:0022-3727

    摘要:Carbon nanotube (CNT) junctions have a wide range of potential applications in nanoelectronic devices, whose performance strongly relies on the stability of the junctions. The tensile strength and failure mode of zigzag junctions are investigated under different strain rates, temperatures, and geometrical dimensions. Firstly, both the modified transition state theory model and molecular dynamics (MD) simulations reveal that the yield strain of a junction depends linearly on the temperature and logarithmically on the strain rate. Moreover, MD simulations show that the yield strain is also affected by the curvature of the junction and the limit yield strain can be predicted by considering an unwrapped junction with the minimal curvature. Secondly, a junction may undergo a brittle or a ductile failure mode and the brittle-ductile transition (BDT) is dependent on the strain rate, temperature and geometrical dimension. The dominant geometrical factor affecting the failure modes is shown to be the aspect ratio rather than merely the diameter or length. Also, the BDT temperature, strain rate and aspect ratio is obtained. These findings may help to gain a deeper understanding of the tensile behaviour of CNT junctions and to provide a useful guidance for the design of CNT junction-based nanoelectronic devices.