点击次数：

发布时间：2019-03-12

论文类型：期刊论文

发表时间：2017-06-01

发表刊物：IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

收录刊物：Scopus、EI、SCIE

卷号：17

期号：2

页面范围：324-330

ISSN号：1530-4388

关键字：ZrO2; high-k; MIM capacitor; TDDB; AC stress

摘要：In this paper, the time dependent dielectric breakdown behavior is investigated for production type crystalline ZrO2-based thin films under dc and ac stress. Constant voltage stress measurements over six decades in time show that the voltage acceleration of time-to-breakdown follows the conventional exponential law. The effects of ac stress on time-to-breakdown are studied in detail by changing the experimental parameters including stress voltage, base voltage, and frequency. In general, ac stressing gives rise to a gain in lifetime, which may result from less overall charge trapping. This trap dynamic was investigated by dielectric absorption measurements. Overall, the typical DRAM refresh of the capacitor leads to the most critical reliability concern.