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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：德国卡尔斯鲁厄工业大学
学位：博士
所在单位：材料科学与工程学院
学科：材料物理与化学. 微电子学与固体电子学
办公地点：辽宁省大连市高新园区凌工路2号
大连理工大学新三束实验室412
电子邮箱：zhoudayu@dlut.edu.cn
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- [1]王梦晓, 隋金洋, 张斌, Xu, Jin, Su, Yunpeng, Gu, Jiaye, 孙纳纳, 周大雨.Impacts of substrate materials on microstructure and electrochemical properties of Ti/TiN/TiON la...[J],APPLIED MATERIALS TODAY,2024,41
- [2]赵泳淞, 隋金洋, 习娟, 周大雨, Tong, Yi, Kou, Qidi.Phase transition, leakage, dielectric permittivity and polarization switching of Al1-xScxN films ...[J],Ceramics International,2024
- [3]Shao, Weijing, Zhang, Miaocheng, Wang, Xinpeng, Hao, 周大雨, Xue, Junshuai, Ping, Liang, Zeng, Tong, Yi.What You Need to Know for Growth of AlScN Thin Film via Atomic Layer Deposition?[A],2024 IEEE International Conference on IC Design and Technology, ICICDT 2024,2024
- [4]习娟, 赵泳淞, 周大雨, Tong, Yi, 吕天明.Effect of abnormally oriented grains on the ferroelectric properties of Al0.65Sc0.35N thin films[J],Materials Today Communications,2024,41
- [5]Kang, Yao, 隋金洋, Chen, Jian, Wang, Xudong, 周大雨, 姚曼, Yao, Man, Zhou, Dayu.Key Factors of Uniform Polarization Reversal Barrier in Wurtzite Materials Utilizing Machine Lear...[J],ACS APPLIED MATERIALS & INTERFACES,2024,16(37):49484-49495
- [6]习娟, 寇启迪, 赵泳淞, 周大雨, 吕天明, Tong, Yi.Realization of ferroelectricity in sputtered Al1-xScxN films with a wide range of Sc content[J],Materials Today Communications,2024,39
- [7]孙玥, 习娟, 段金岐, Ning, Jianping, 周大雨.Enhancement of ferroelectricity in chemical-solution-deposited ZrO2 thin films through fine phase...[J],Ceramics International,2024
- [8]高金铭, 李金琦, 王梦晓, Xu, Jin, 周大雨.Effects of substrate bias voltage on conductivity and internal stress of TiN films[J],2024,179
- [9]宁建平, Tang, Zhen, Chen, Lunqian, Li, Bowen, Wu, Qidi, Sun, Yue, 周大雨.Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-En...[J],2024,13(14)
- [10]Wang, Jingjing, 周大雨, Dong, Wei, Yao, Yifan, Sun, Nana, Ali, Faizan, 侯晓多, 刘峰.Effect of annealing protection atmosphere on the ferroelectric yttrium doped hafnium oxide thin...[J],CERAMICS INTERNATIONAL,2022,46(14):22550-22556
- [11]Zhang, Weiqi, 周大雨, 孙纳纳, Wang, Jingjing, Li, Shuaidong.Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO2 Thin Fi...[J],ADVANCED ELECTRONIC MATERIALS,2022,7(10)
- [12]Liang, Hailong, 张博, 周大雨, Guo, Xintai, 李彦, Lu, Yanqing, Yuanyuan.Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 ...[J],CERAMICS INTERNATIONAL,2022,47(9):12137-12143
- [13]Wang, Jingjing, 周大雨, 董伟, Li, Ziqi, 孙纳纳, 侯晓多, 刘峰.Effect of the Hf content on the microstructure and ferroelectric properties of HfxZr1-xO2 thin fi...[J],NANOSCALE,2022,13(38):16216-16225
- [14]Zhao, Peng, 周大雨, 刘峰, Sun, Nana, Li, Shuaidong.Effects of deposition temperature on the properties of sputtered yttrium-doped hafnium oxide th...[J],Materials Research Express,2022,6(8)
- [15]Li, Hongming, Zhao, Yajun, 李晓娜, 周大雨, 董闯.Electrical resistivity interpretation of ternary Cu-Ni-Mo alloys using a cluster-based short-ra...[J],JOURNAL OF PHYSICS D APPLIED PHYSICS,2022,49(3)
- [16]周大雨, Schroeder, Uwe, Guan, Yan, Vopson, Melvin M., 许进, Liang, Hailong, Cao, Fei, Dong, Xianlin, Mueller, Johannes, Schenk, Tony.Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ...[J],ACTA MATERIALIA,2022,99:240-246
- [17]刘晓华, 周大雨, Guan, Yan, Li, Shuaidong, Cao, Fei, Dong, Xianlin.Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like th...[J],ACTA MATERIALIA,2022,154:190-198
- [18]Zhang, Yu, 徐军, 王友年, Choi, Chi Kyu, 周大雨.Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and ele...[J],JOURNAL OF THE KOREAN PHYSICAL SOCIETY,2022,68(5):679-685
- [19]Wang, Jingjing, 周大雨, 董伟, 侯晓多, 刘峰, 孙纳纳, Ali, Faizan, Li, Ziqi.Ferroelectric properties of pure ZrO2 thin films by chemical solution deposition[J],CERAMICS INTERNATIONAL,2022,47(12):16845-16851
- [20]Wang, Xuexia, 周大雨, Li, Shuaidong, 刘晓华, Zhao, Peng, Sun, Nana, Ali, Faizan, Jingjing.Ferroelectric yttrium doped hafnium oxide films from all-inorganic aqueous precursor solution[J],CERAMICS INTERNATIONAL,2022,44(12):13867-13872