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发布时间：2019-03-12

论文类型：期刊论文

发表时间：2017-04-15

发表刊物：MATERIALS & DESIGN

收录刊物：EI、SCIE

卷号：120

页面范围：376-381

ISSN号：0264-1275

关键字：Pure and yttrium-doped HfO2; Layer by layer crystallization process; Thin films; Electrical properties

摘要：Pure and yttrium doped HfO2 thin films were fabricated on Si (100) substrates by chemical solution deposition through a layer by layer crystallization process. We systematically investigated the effects of thickness and Y doped concentration on structure and electrical properties of the HfO2 films. Results revealed that 4 nm thick undoped HfO2 was crystallized into a t/c-phase due to the surface energy effect, and this higher symmetry phase could be retained up to a film thickness of 16 nm through the layer by layer crystallization process. This layer by layer crystallization process also required less Y doping to stabilize t/c-HfO2 in thick films. The films showed a high dielectric constant about 42, low leakage current density of about 10(-7) A/cm(2) (at 1 MV/cm) and a breakdown field up to 5 MV/cm. Considering the cost-effective deposition technique and good electrical properties, these films would be suitable for insulator applications in microelectronic devices. (C) 2017 Elsevier Ltd. All rights reserved.