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发表时间：2017-01-01

发表刊物：功能材料

卷号：48

期号：10

页面范围：10154-10158

ISSN号：1001-9731

摘要：Hafnium oxide has been widely used in fabrication of microelectronic devices as an insulator dielectric material,and stability of its tetragonal or cubic phases with higher dielectric permittivity is controlled by the concentration of dopant elements and the film thickness.In this work,yttrium doped hafnium oxide thin films were prepared on the low resistance silicon substrate by sol-gel method using inorganic aqueous precursor.The crystalline structure of the films were investigated by using X-ray diffraction method,the critical yttrium content and thickness required for stabilization of the tetragonal/cubic phase at room temperature has been identified.The effect of phase structure on the evolution of the dielectric permittivity and the leakage current was reported as well.The results are of technical importance for application of hafnium oxide thin films in micro/nanostructural capacitors.

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