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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：德国卡尔斯鲁厄工业大学
学位：博士
所在单位：材料科学与工程学院
学科：材料物理与化学. 微电子学与固体电子学
办公地点：辽宁省大连市高新园区凌工路2号
大连理工大学新三束实验室412
电子邮箱：zhoudayu@dlut.edu.cn
衬底温度对直流反应磁控溅射TiN电极薄膜显微结构及导电性能的影响
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发表时间：2017-01-01
发表刊物：功能材料
卷号：48
期号：8
页面范围：203-207
ISSN号：1001-9731
摘要：In the study of hafnium oxide based new-type ferroelectric thin films devices, it is required to deposit TiN ultra-thin electrode films with high conductivity and low surface roughness at low temperature.In this work, TiN thin film were prepared by DC reactive magnetron sputtering on silicon substrates with the deposition temperature changed from room temperature to 350 ℃.The composition, crystalline structure, surface roughness, thickness and density of the films were characterized by XPS, XRD, AFM, and XRR methods.It was found that, by reducing the deposition time, TiN electrode thin films with the thickness less than 30 nm and high conductivity can be successfully fabricate at the relatively low deposition temperature of 350 ℃.
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