论文成果
Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
  • 点击次数:
  • 发表时间:2022-10-02
  • 发表刊物:ACTA MATERIALIA
  • 所属单位:材料科学与工程学院
  • 文献类型:J
  • 卷号:99
  • 页面范围:240-246
  • ISSN号:1359-6454

上一条: Electrical resistivity interpretation of ternary Cu-Ni-Mo alloys using a cluster-based short-range-order structural model

下一条: Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction