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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2014-03-01

发表刊物：IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

收录刊物：EI、SCIE

卷号：14

期号：1

页面范围：154-160

ISSN号：1530-4388

关键字：High-k; leakage model; metal-insulator-metal (MIM) capacitor; reliability; ZrO2

摘要：This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO2/Al2O3/ZrO2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperature-dependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.