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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：德国卡尔斯鲁厄工业大学
学位：博士
所在单位：材料科学与工程学院
学科：材料物理与化学. 微电子学与固体电子学
办公地点：辽宁省大连市高新园区凌工路2号
大连理工大学新三束实验室412
电子邮箱：zhoudayu@dlut.edu.cn
Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-k Dielectrics for Three-Dimensional Stacked Metal-Insulator-Metal Capacitors
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论文类型：期刊论文
发表时间：2014-03-01
发表刊物：IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
收录刊物：SCIE、EI
卷号：14
期号：1
页面范围：154-160
ISSN号：1530-4388
关键字：High-k; leakage model; metal-insulator-metal (MIM) capacitor; reliability; ZrO2
摘要：This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO2/Al2O3/ZrO2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperature-dependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.