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论文类型：期刊论文

发表时间：2016-10-01

发表刊物：IEEE ELECTRON DEVICE LETTERS

收录刊物：SCIE、EI、Scopus

卷号：37

期号：10

页面范围：1328-1331

ISSN号：0741-3106

关键字：MOS capacitor; double-frequency correction; five-element model; interface layer; parallel resistance; series resistance

摘要：For a very thin dielectric MOS capacitor, the influence of the interface layer on MOS capacitance extraction is not negligible. We report a new correction method for a thin dielectric MOS capacitor based on the five-element model, which includes MOS capacitance, parallel resistance, series resistance, interface capacitance, and interface resistance. This method needs to combine double-frequency C-V and I-V measurement data. By comparing the impedance of the five-element model with that of the two-element model, we have five characteristic equations. From these equations, we deduce a five-degree equation and then provide accurate numerical solutions for all five elements. Furthermore, we successfully demonstrate an application to Al/ZrO2/IL/n-Si capacitor (IL: interface layer). After correction, the frequency dispersion and upturn (or roll-off) of MOS capacitances at accumulation disappear. This correction method is superior to other methods. All five parameters in the five-element model have physically reasonable values. The relative dielectric constant (er) and dielectric loss (tand) are also calculated. These results show the validity and self-consistency of this new correction method.