赵宁
Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Main positions:材料科学与工程学院副院长
Gender:Male
Alma Mater:Dalian University of Technology
Degree:Doctoral Degree
School/Department:School of Materials Science and Engineering
Discipline:Materials Science
Business Address:知远楼B515(新材料大楼)
E-Mail:zhaoning@dlut.edu.cn
Hits:
Indexed by:会议论文
Date of Publication:2014-08-12
Included Journals:EI、CPCI-S、Scopus
Page Number:429-432
Key Words:Keywords Size effect; Cross-interaction; Cu/Sn-3Ag-0.5Cu/Ni-P interconnect; Interfacial reaction; Intermetallic compound
Abstract:The continuous downsizing of solder interconnect will significantly affect the wetting reactions between solder balls and pads and the cross-interaction of opposite heterogeneous pads, which further affects the reliability of the interconnect. In the present work, Cu/Sn-3Ag-0.5Cu/Ni-P solder interconnects with ball diameters of 200, 300, 400 and 500 pm were refk v soldered to study the size effect and cross-interaction in the solder interconnects. It was Inund that (Cu,Ni)6Sn5 type intertnetallic compounds (IMCs) formed on both Cu and Ni-P pads after soldering. The IMCs formed on the Cu pad had a scallop morphology and those formed on the Ni-P pad had a needle-type morphology. Meanwhile, cross-interaction occurred in all the C7u/Sn-3Ag-0.5CulNi-P interconnects, i.e., the Ni atoms that diffused from the Ni-P side to the Cu side refined the (Cu,Ni)6Sns at the solder/Cu interface; also, the Cu atoms diffused from the Cu side to the Ni-P side prevented the transformation of IMCs from (Cu,Ni)6Sn5 to (Ni,Cu)3Sn4 at the solder/Ni-P interface. Moreover, the grain size of (Cu,Ni)6Sn5 in the 200 pm solder interconnect was larger than that in the 500 pm solder interconnect at Cu side.
赵宁,工学博士,教授,博士生导师,现任材料科学与工程学院副院长。《Scientific Reports》期刊编委,IEEE会员、IEEE-EPS会员,中国电子学会(电子制造与封装技术分会)、中国材料研究学会、中国机械工程学会高级会员。
2003年本科毕业于东北大学材料物理专业,2008年博士毕业于大连理工大学材料学专业。2009年至2011年在中科院微电子研究所系统封装技术研究室从事博士后研究,2011年加入大连理工大学材料学院,同年评为副教授,2017年评为博士生导师,2018年评为教授。2016年至2017年在美国佐治亚理工学院做访问学者,合作学者为美国工程院院士、中国工程院外籍院士C.P. Wong教授。
主要从事电子封装微互连材料与技术的基础理论及应用研究,重点围绕微互连方法与成型机理,微焊点晶粒生长调控、组织演变、热迁移行为与可靠性测试分析,晶圆级互连技术,无铅焊料及BGA焊球设计开发与组织控制,以及低电阻率电镀铜膜/线等方面开展深入研究。
主持国家自然科学基金(4项)、省部级科研项目十余项,参与多项国家科技重大专项等项目。在Acta Mater.、J. Mater. Sci. Tech.、ACS Appl. Mater. Inter.、Mater. Des.、Appl. Phys. Lett.、Scripta Mater.、Appl. Surf. Sci.、J. Mater. Process. Tech.、J. Mater. Res. Tech.、Adv. Mater. Inter.、J. Alloy. Compd.、Sci. Rep.、Mater. Charact.、Intermetallics、Mater. Res. Bull.、J. Appl. Phys.、Mater. Lett.、Mater. Chem. Phys.、J. Mater. Res.、J. Electron. Mater.、物理学报、金属学报、中国有色金属学报(英文版)、稀有金属材料与工程、焊接学报等期刊上发表学术论文120余篇;在ECTC、ICEPT、CSTIC、EPTC等国际学术会议上发表EI论文60余篇,5次获得最佳论文奖;获中国发明专利授权27项。入选辽宁省“百千万人才工程”、大连市高层次人才计划。
指导学生:
在读硕士生11人,博士生6人。
已毕业博士生5、硕士生24人。