赵宁
Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Main positions:材料科学与工程学院副院长
Gender:Male
Alma Mater:Dalian University of Technology
Degree:Doctoral Degree
School/Department:School of Materials Science and Engineering
Discipline:Materials Science
E-Mail:zhaoning@dlut.edu.cn
Hits:
Indexed by:会议论文
Date of Publication:2014-08-12
Included Journals:EI、CPCI-S、Scopus
Page Number:429-432
Key Words:Keywords Size effect; Cross-interaction; Cu/Sn-3Ag-0.5Cu/Ni-P interconnect; Interfacial reaction; Intermetallic compound
Abstract:The continuous downsizing of solder interconnect will significantly affect the wetting reactions between solder balls and pads and the cross-interaction of opposite heterogeneous pads, which further affects the reliability of the interconnect. In the present work, Cu/Sn-3Ag-0.5Cu/Ni-P solder interconnects with ball diameters of 200, 300, 400 and 500 pm were refk v soldered to study the size effect and cross-interaction in the solder interconnects. It was Inund that (Cu,Ni)6Sn5 type intertnetallic compounds (IMCs) formed on both Cu and Ni-P pads after soldering. The IMCs formed on the Cu pad had a scallop morphology and those formed on the Ni-P pad had a needle-type morphology. Meanwhile, cross-interaction occurred in all the C7u/Sn-3Ag-0.5CulNi-P interconnects, i.e., the Ni atoms that diffused from the Ni-P side to the Cu side refined the (Cu,Ni)6Sns at the solder/Cu interface; also, the Cu atoms diffused from the Cu side to the Ni-P side prevented the transformation of IMCs from (Cu,Ni)6Sn5 to (Ni,Cu)3Sn4 at the solder/Ni-P interface. Moreover, the grain size of (Cu,Ni)6Sn5 in the 200 pm solder interconnect was larger than that in the 500 pm solder interconnect at Cu side.
赵宁,工学博士,教授,博士生导师,现任材料科学与工程学院副院长。《Scientific Reports》期刊编委,IEEE会员、IEEE-EPS会员,中国电子学会(电子制造与封装技术分会)、中国材料研究学会、中国机械工程学会高级会员。
2003年本科毕业于东北大学材料物理专业,2008年博士毕业于大连理工大学材料学专业。2009年至2011年在中科院微电子研究所系统封装技术研究室从事博士后研究,2011年加入大连理工大学材料学院,同年评为副教授,2017年评为博士生导师,2018年评为教授。2016年至2017年在美国佐治亚理工学院做访问学者,合作学者为美国工程院院士、中国工程院外籍院士C.P. Wong教授。
主要从事电子封装微互连材料与技术的基础理论及应用研究,重点围绕微互连方法与成型机理,微焊点晶粒生长调控、组织演变、热迁移行为与可靠性测试分析,晶圆级互连技术,无铅焊料及BGA焊球开发与组织控制,低电阻率电镀铜膜/线等方面开展深入研究。
主持国家自然科学基金(4项)、省部级科研项目十余项,参与多项国家科技重大专项等项目。在Acta Mater.、Mater. Des.、J. Mater. Sci. Tech.、Appl. Phys. Lett.、Scripta Mater.、J. Mater. Process. Tech.、Sci. Rep.、J. Alloys Compd.、Appl. Surf. Sci.、Mater. Charact.、Intermetallics、Mater. Res. Bull.、J. Appl. Phys.、Mater. Lett.、Mater. Chem. Phys.、J. Mater. Res.、J. Electron. Mater.、物理学报、金属学报、中国有色金属学报(英文版)、稀有金属材料与工程等期刊上发表学术论文100余篇;在ECTC、ICEPT、CSTIC、EPTC等国际学术会议上发表EI论文60余篇,5次获得最佳论文奖;获中国发明专利授权25项。入选辽宁省“百千万人才工程”、大连市高层次人才计划。
指导学生:
在读硕士生11人,博士生6人。
已毕业博士生3、硕士生15人。
指导研究生多次获得国家奖学金、省优秀毕业生、市三好学生、校优秀博士/硕士研究生、优秀学位论文等荣誉。
欢迎有意从事微电子制造、微电子封装行业,具有材料、机械、物理、微电子专业背景,勤奋好学、积极乐观的学子们加入本课题组!