赵宁
Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Main positions:材料科学与工程学院副院长
Gender:Male
Alma Mater:Dalian University of Technology
Degree:Doctoral Degree
School/Department:School of Materials Science and Engineering
Discipline:Materials Science
E-Mail:zhaoning@dlut.edu.cn
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Indexed by:期刊论文
Date of Publication:2018-01-01
Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Included Journals:SCIE、EI、Scopus
Volume:29
Issue:1
Page Number:589-601
ISSN No.:0957-4522
Abstract:Synchrotron radiation X-ray real-time imaging technology was used to study the interfacial reactions of Sn and Sn3.5Ag solders with Cu and Ni substrates during the heat preservation stage. This experiment allows us to in-situ observe the interfacial intermetallic compounds (IMCs) growth, provides a stage to distinctly separate their growth at isothermal reflow and cooling durations, and thus avoids the measurement errors for size and morphology of interfacial IMCs. The results show that the Cu6Sn5 morphology is scalloped at Sn-xAg/Cu interfaces, whereas (Cu,Ni)(6)Sn-5 is wide-stripe shaped at Sn-xAg/Ni interface during the heat preservation stage. It is interesting to note that the grain boundary molten liquid gaps is observed at both of the Sn3.5Ag/Cu and Sn3.5Ag/Ni interfaces. Compared with pure Sn solder, Sn3.5Ag solders are observed with interfacial IMC of greater thickness, smaller base width, lower aspect ratio and more substrate consumption. In addition, it is confirmed that Ag3Sn grains appear in Sn3.5Ag solder, but not on the surface of existing interfacial Cu6Sn5 grains at Sn3.5Ag/Cu interface during the heat preservation stage. All of the growth kinetic index (n) for Sn-xAg/Cu is close to 1/3 indicating that grain boundary diffusion determines the interfacial reaction at the heat preservation stage. The mechanism by which Ag addition affects interfacial reaction and changes the mirostructure of solder matrix through creation of grain boundary gaps and decrease of the growth activation energy of IMC is also clarified. The knowledge for morphology and thickness control of interfacial IMCs by alloy elements addition as outlined by this study can be utilized to improve the reliability of solder joints in electronic packaging and solar photovoltaic (PV) cells array manufacturing sectors.
赵宁,工学博士,教授,博士生导师,现任材料科学与工程学院副院长。《Scientific Reports》期刊编委,IEEE会员、IEEE-EPS会员,中国电子学会(电子制造与封装技术分会)、中国材料研究学会、中国机械工程学会高级会员。
2003年本科毕业于东北大学材料物理专业,2008年博士毕业于大连理工大学材料学专业。2009年至2011年在中科院微电子研究所系统封装技术研究室从事博士后研究,2011年加入大连理工大学材料学院,同年评为副教授,2017年评为博士生导师,2018年评为教授。2016年至2017年在美国佐治亚理工学院做访问学者,合作学者为美国工程院院士、中国工程院外籍院士C.P. Wong教授。
主要从事电子封装微互连材料与技术的基础理论及应用研究,重点围绕微互连方法与成型机理,微焊点晶粒生长调控、组织演变、热迁移行为与可靠性测试分析,晶圆级互连技术,无铅焊料及BGA焊球开发与组织控制,低电阻率电镀铜膜/线等方面开展深入研究。
主持国家自然科学基金(4项)、省部级科研项目十余项,参与多项国家科技重大专项等项目。在Acta Mater.、Mater. Des.、J. Mater. Sci. Tech.、Appl. Phys. Lett.、Scripta Mater.、J. Mater. Process. Tech.、Sci. Rep.、J. Alloys Compd.、Appl. Surf. Sci.、Mater. Charact.、Intermetallics、Mater. Res. Bull.、J. Appl. Phys.、Mater. Lett.、Mater. Chem. Phys.、J. Mater. Res.、J. Electron. Mater.、物理学报、金属学报、中国有色金属学报(英文版)、稀有金属材料与工程等期刊上发表学术论文100余篇;在ECTC、ICEPT、CSTIC、EPTC等国际学术会议上发表EI论文60余篇,5次获得最佳论文奖;获中国发明专利授权25项。入选辽宁省“百千万人才工程”、大连市高层次人才计划。
指导学生:
在读硕士生11人,博士生6人。
已毕业博士生3、硕士生15人。
指导研究生多次获得国家奖学金、省优秀毕业生、市三好学生、校优秀博士/硕士研究生、优秀学位论文等荣誉。
欢迎有意从事微电子制造、微电子封装行业,具有材料、机械、物理、微电子专业背景,勤奋好学、积极乐观的学子们加入本课题组!