赵宁

Professor   Supervisor of Doctorate Candidates   Supervisor of Master's Candidates

Main positions:材料科学与工程学院副院长

Gender:Male

Alma Mater:Dalian University of Technology

Degree:Doctoral Degree

School/Department:School of Materials Science and Engineering

Discipline:Materials Science

E-Mail:zhaoning@dlut.edu.cn


Paper Publications

Growth kinetics of Cu6Sn5 intermetallic compound at liquid-solid interfaces in Cu/Sn/Cu interconnects under temperature gradient

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Indexed by:Journal Papers

Date of Publication:2015-08-27

Journal:SCIENTIFIC REPORTS

Included Journals:SCIE、PubMed、Scopus

Volume:5

Page Number:13491

ISSN No.:2045-2322

Abstract:The growth behavior of intermetallic compounds (IMCs) at the liquid-solid interfaces in Cu/Sn/Cu interconnects during reflow at 250 degrees C and 280 degrees C on a hot plate was investigated. Being different from the symmetrical growth during isothermal aging, the interfacial IMCs showed clearly asymmetrical growth during reflow, i.e., the growth of Cu6Sn5 IMC at the cold end was significantly enhanced while that of Cu3Sn IMC was hindered especially at the hot end. It was found that the temperature gradient had caused the mass migration of Cu atoms from the hot end toward the cold end, resulting in sufficient Cu atomic flux for interfacial reaction at the cold end while inadequate Cu atomic flux at the hot end. The growth mechanism was considered as reaction/thermomigration-controlled at the cold end and grain boundary diffusion/thermomigration-controlled at the hot end. A growth model was established to explain the growth kinetics of the Cu6Sn5 IMC at both cold and hot ends. The molar heat of transport of Cu atoms in molten Sn was calculated as + 11.12 kJ/mol at 250 degrees C and + 14.65 kJ/mol at 280 degrees C. The corresponding driving force of thermomigration in molten Sn was estimated as 4.82 x 10(-19) N and 6.80 x 10(-19) N.

Pre One:电容耦合式无线电能传输系统阻抗变换网络的设计

Next One:微焊点中金属原子的热迁移及其对界面反应影响的研究进展

Profile

赵宁,工学博士,教授,博士生导师,现任材料科学与工程学院副院长。《Scientific Reports》期刊编委,IEEE会员、IEEE-EPS会员,中国电子学会(电子制造与封装技术分会)、中国材料研究学会、中国机械工程学会高级会员。

2003年本科毕业于东北大学材料物理专业,2008年博士毕业于大连理工大学材料学专业。2009年至2011年在中科院微电子研究所系统封装技术研究室从事博士后研究,2011年加入大连理工大学材料学院,同年评为副教授,2017年评为博士生导师,2018年评为教授。2016年至2017年在美国佐治亚理工学院做访问学者,合作学者为美国工程院院士、中国工程院外籍院士C.P. Wong教授。

主要从事电子封装微互连材料与技术的基础理论及应用研究,重点围绕微互连方法与成型机理,微焊点晶粒生长调控、组织演变、热迁移行为与可靠性测试分析,晶圆级互连技术,无铅焊料及BGA焊球开发与组织控制,低电阻率电镀铜膜/线等方面开展深入研究。

主持国家自然科学基金(4项)、省部级科研项目十余项,参与多项国家科技重大专项等项目。在Acta Mater.、Mater. Des.、J. Mater. Sci. Tech.、Appl. Phys. Lett.、Scripta Mater.、J. Mater. Process. Tech.、Sci. Rep.、J. Alloys Compd.、Appl. Surf. Sci.、Mater. Charact.、Intermetallics、Mater. Res. Bull.、J. Appl. Phys.、Mater. Lett.、Mater. Chem. Phys.、J. Mater. Res.、J. Electron. Mater.、物理学报、金属学报、中国有色金属学报(英文版)、稀有金属材料与工程等期刊上发表学术论文100余篇;在ECTC、ICEPT、CSTIC、EPTC等国际学术会议上发表EI论文60余篇,5次获得最佳论文奖;获中国发明专利授权25项。入选辽宁省“百千万人才工程”、大连市高层次人才计划。

指导学生:

在读硕士生11人,博士生6人。

已毕业博士生3、硕士生15人。

指导研究生多次获得国家奖学金、省优秀毕业生、市三好学生、校优秀博士/硕士研究生、优秀学位论文等荣誉。

 

欢迎有意从事微电子制造、微电子封装行业,具有材料、机械、物理、微电子专业背景,勤奋好学、积极乐观的学子们加入本课题组!