赵宁
Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Main positions:材料科学与工程学院副院长
Gender:Male
Alma Mater:Dalian University of Technology
Degree:Doctoral Degree
School/Department:School of Materials Science and Engineering
Discipline:Materials Science
E-Mail:zhaoning@dlut.edu.cn
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Indexed by:期刊论文
Date of Publication:2012-07-01
Journal:MATERIALS SCIENCE AND TECHNOLOGY
Included Journals:SCIE、EI、Scopus
Volume:28
Issue:7
Page Number:837-843
ISSN No.:0267-0836
Key Words:LED; Au-230 at-%Sn eutectic solder; Aging; Reflowing; Alloying
Abstract:Au-30 at-%Sn eutectic alloy was fabricated by sequentially pulse electroplating Au and Sn films on Si chips. Three kinds of Au/Sn/Au triple layer films were prepared in the present work: Au/Sn/Au (6/6/1 mu m) films, Au/Sn/Au (6/6/6 mu m) films and Au/Sn/Au (8/6/1 mu m) films. The microstructure and phase transformation in Au/Sn/Au films during aging and reflow soldering were investigated. For Au/Sn/Au (6/6/1 mu m) films during aging at 100 and 150 degrees C, the layered AuSn/AuSn2/AuSn4 structure formed in the reaction region. Furthermore, the Sn film was completely consumed, and AuSn4 finally transformed into AuSn and AuSn2 after aging at 150 degrees C for 15 h. For Au/Sn/Au (6/6/6 mu m) films during aging at 150 degrees C, the electroplating sequence had an important effect on the formation of Au-Sn phases. An Au5Sn layer was present at the Au II/Sn interface but not at the Au I/Sn interface. For Au/Sn/Au (8/6/1 mu m) films, the micropores that formed preferentially along the Au5Sn/AuSn interface remarkably decreased with increasing reflow temperature from 280 to 310 degrees C. After reflowing for 10 s, the microstructure was not an Au-Sn eutectic; however, after reflowing for 60 s, coarsened primary Au5Sn phase and typical Au-30 at-%Sn eutectic microstructure of fine eutectic phases (AuSn + Au5Sn) formed.
赵宁,工学博士,教授,博士生导师,现任材料科学与工程学院副院长。《Scientific Reports》期刊编委,IEEE会员、IEEE-EPS会员,中国电子学会(电子制造与封装技术分会)、中国材料研究学会、中国机械工程学会高级会员。
2003年本科毕业于东北大学材料物理专业,2008年博士毕业于大连理工大学材料学专业。2009年至2011年在中科院微电子研究所系统封装技术研究室从事博士后研究,2011年加入大连理工大学材料学院,同年评为副教授,2017年评为博士生导师,2018年评为教授。2016年至2017年在美国佐治亚理工学院做访问学者,合作学者为美国工程院院士、中国工程院外籍院士C.P. Wong教授。
主要从事电子封装微互连材料与技术的基础理论及应用研究,重点围绕微互连方法与成型机理,微焊点晶粒生长调控、组织演变、热迁移行为与可靠性测试分析,晶圆级互连技术,无铅焊料及BGA焊球开发与组织控制,低电阻率电镀铜膜/线等方面开展深入研究。
主持国家自然科学基金(4项)、省部级科研项目十余项,参与多项国家科技重大专项等项目。在Acta Mater.、Mater. Des.、J. Mater. Sci. Tech.、Appl. Phys. Lett.、Scripta Mater.、J. Mater. Process. Tech.、Sci. Rep.、J. Alloys Compd.、Appl. Surf. Sci.、Mater. Charact.、Intermetallics、Mater. Res. Bull.、J. Appl. Phys.、Mater. Lett.、Mater. Chem. Phys.、J. Mater. Res.、J. Electron. Mater.、物理学报、金属学报、中国有色金属学报(英文版)、稀有金属材料与工程等期刊上发表学术论文100余篇;在ECTC、ICEPT、CSTIC、EPTC等国际学术会议上发表EI论文60余篇,5次获得最佳论文奖;获中国发明专利授权25项。入选辽宁省“百千万人才工程”、大连市高层次人才计划。
指导学生:
在读硕士生11人,博士生6人。
已毕业博士生3、硕士生15人。
指导研究生多次获得国家奖学金、省优秀毕业生、市三好学生、校优秀博士/硕士研究生、优秀学位论文等荣誉。
欢迎有意从事微电子制造、微电子封装行业,具有材料、机械、物理、微电子专业背景,勤奋好学、积极乐观的学子们加入本课题组!