赵宁

Professor   Supervisor of Doctorate Candidates   Supervisor of Master's Candidates

Main positions:材料科学与工程学院副院长

Gender:Male

Alma Mater:Dalian University of Technology

Degree:Doctoral Degree

School/Department:School of Materials Science and Engineering

Discipline:Materials Science

E-Mail:zhaoning@dlut.edu.cn


Paper Publications

Effect of electromigration on interfacial reaction in Ni/Sn3.0Ag0.5Cu/Au/Pd/Ni-P flip chip solder joints

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Indexed by:期刊论文

Date of Publication:2012-01-01

Journal:ACTA PHYSICA SINICA

Included Journals:SCIE、PKU、ISTIC、Scopus

Volume:61

Issue:19

ISSN No.:1000-3290

Key Words:electromigration; lead-free solder; Ni/Sn3.0Ag0.5Cu/Au/Pd/Ni-P solder joint; interfacial reaction

Abstract:The effect of electromigration (EM) on the interfacial reaction in the Ni/Sn3.0Ag0.5Cu/Au/Pd/Ni-P flip chip solder joint is investigated under a current density of 1.0 x 10(4) A/cm(2) at 150 degrees C. The (Cu,Ni)(6)Sn-5 intermetallic compounds (IMCs) form at both solder/Ni and solder/Ni-P interfaces in the as-reflowed state. During aging at 150 degrees C, the (Cu,Ni)(6)Sn-5 interfacial IMCs grow thicker and transform into (Ni,Cu)(3)Sn-4 type after 200 h at solder/Ni interface and 600 h at solder/Ni-P interface, respectively. During EM, the current direction plays an important role in Ni-P layer consumption. When electrons flow from Ni-P to Ni, EM enhances the consumption of Ni-P, i.e., the Ni-P s completely consumed and transforms into Ni2SnP after EM for 600 h. There is no Cu-Sn-Ni ternary IMC at the solder/Ni-P interface (cathode). Crack forms at the Ni2SnP/Cu interface due to the weak bonding force between Ni2SnP and Cu. When electrons flow from Ni to Ni-P, no obvious consumption of Ni-P is observed during EM; the current crowding effect induces a rapid and localized dissolution of Ni UBM and Cu pad at the chip side (cathode). The dissolved Ni and Cu atoms are driven along the flowing direction of electrons and form a large number of IMC particles in the solder matrix. During EM, the (Au,Pd,Ni)Sn-4 phase prefers to be redistributed only at the anode interface, regardless of the direction of electron flow.

Pre One:Effects of cooling rate and solder volume on the formation of large Ag 3Sn plates in Sn-Ag based solder joints

Next One:Simulation of IMC Layer Growth and Cu Consumption in Sn-Ag-xCu/Cu Solder Joints during Reflow

Profile

赵宁,工学博士,教授,博士生导师,现任材料科学与工程学院副院长。《Scientific Reports》期刊编委,IEEE会员、IEEE-EPS会员,中国电子学会(电子制造与封装技术分会)、中国材料研究学会、中国机械工程学会高级会员。

2003年本科毕业于东北大学材料物理专业,2008年博士毕业于大连理工大学材料学专业。2009年至2011年在中科院微电子研究所系统封装技术研究室从事博士后研究,2011年加入大连理工大学材料学院,同年评为副教授,2017年评为博士生导师,2018年评为教授。2016年至2017年在美国佐治亚理工学院做访问学者,合作学者为美国工程院院士、中国工程院外籍院士C.P. Wong教授。

主要从事电子封装微互连材料与技术的基础理论及应用研究,重点围绕微互连方法与成型机理,微焊点晶粒生长调控、组织演变、热迁移行为与可靠性测试分析,晶圆级互连技术,无铅焊料及BGA焊球开发与组织控制,低电阻率电镀铜膜/线等方面开展深入研究。

主持国家自然科学基金(4项)、省部级科研项目十余项,参与多项国家科技重大专项等项目。在Acta Mater.、Mater. Des.、J. Mater. Sci. Tech.、Appl. Phys. Lett.、Scripta Mater.、J. Mater. Process. Tech.、Sci. Rep.、J. Alloys Compd.、Appl. Surf. Sci.、Mater. Charact.、Intermetallics、Mater. Res. Bull.、J. Appl. Phys.、Mater. Lett.、Mater. Chem. Phys.、J. Mater. Res.、J. Electron. Mater.、物理学报、金属学报、中国有色金属学报(英文版)、稀有金属材料与工程等期刊上发表学术论文100余篇;在ECTC、ICEPT、CSTIC、EPTC等国际学术会议上发表EI论文60余篇,5次获得最佳论文奖;获中国发明专利授权25项。入选辽宁省“百千万人才工程”、大连市高层次人才计划。

指导学生:

在读硕士生11人,博士生6人。

已毕业博士生3、硕士生15人。

指导研究生多次获得国家奖学金、省优秀毕业生、市三好学生、校优秀博士/硕士研究生、优秀学位论文等荣誉。

 

欢迎有意从事微电子制造、微电子封装行业,具有材料、机械、物理、微电子专业背景,勤奋好学、积极乐观的学子们加入本课题组!