邹赫麟

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:威尔大学

学位:博士

所在单位:机械工程学院

学科:微机电工程

办公地点:机械工程学院2号楼214-2

联系方式:办公电话:0411-84709754

电子邮箱:zouhl@dlut.edu.cn

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Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol-gel method

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论文类型:期刊论文

发表时间:2018-11-01

发表刊物:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物:SCIE、Scopus

卷号:29

期号:21

页面范围:18668-18673

ISSN号:0957-4522

关键字:Cerium; Crystalline materials; Ferroelectric films; Microstructure; Perovskite; Scanning electron microscopy; Semiconductor doping; Sols, Annealing process; Cerium doping; Cerium-doped; Crystalline orientations; Dielectric and ferroelectric properties; Gel process; Perovskite structures; Remnant polarizations, Thin films

摘要:Pb1.2-xCexZr0.52Ti0.48O3 (PCZT, x=0%, 0.1%, 0.5%, 1%, 2% and 3%) thin films with the thickness of about 1 mu m were fabricated by sol-gel process and traditional annealing process on Pt/Ti/SiO2/Si substrates to investigate the effect of cerium doping on crystalline orientation, microstructure and electric properties of the samples. (100)-oriented Pb1.2-xCexZr0.52Ti0.48O3 films were obtained for all x values. The results of Scanning electron microscopy (SEM) revealed that the 0%, 0.1%, 0.5%, and 1% cerium doped Pb1.2-xCexZr0.52Ti0.48O3 films have a dense columnar perovskite structure. The maximum dielectric constant and remnant polarization were obtained for 0.1% Ce-doped film.