王德君
个人信息Personal Information
教授
博士生导师
硕士生导师
性别:男
毕业院校:清华大学
学位:博士
所在单位:控制科学与工程学院
学科:微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱:dwang121@dlut.edu.cn
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- [61]王德君, 赵亮, Zhu, Qiaozhi, Ma, Jikai, Chen, Suhua, Wang, Haibo.Transition region study of SiO2/4H-SiC interface by ADXPS[J],Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2022,29(5):944-949
- [62]Jiang, Y., Wang, Q.P., Tamai, K., Miyashita, T., Motoyama, S., 王德君, Ao, J.P., Ohno.GaN MOSFET with boron trichloride-based dry recess process[J],Journal of physics Conference series,2022,441(1)
- [63]Zhang H., Qi R., 张丽, Su B., 王德君.Vertical gate RF SOI LIGBT for SPICs with significantly improved latch-up immunity[J],VLSI DESIGN,2022,2011
- [64]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Li, Liuan, Kawaharada, Kazuya, 王德君, Ao, Jin-Ping.Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process[J],Applied Physics Express,2022,8(4)
- [65]Zhang H., Su B., 孙力, 王德君.Vertical gate RF SOI LIGBT without latch-up susceptibility[A],2009 International Semiconductor Device Research Symposium, ISDRS '09,2022
- [66]Wu, Zijian, Cai, Jian, 王谦, Wang, Junqiang, 王德君.Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness[J],JOURNAL OF ELECTRONIC MATERIALS,2022,46(10):6111-6118
- [67]Zhang Haipeng, 王德君, Geng Lu, Lin Mi, Zhang Zhonghai, Lu Weifeng, Wang Xiaoyuan, 王瑛, 张强, Bai Jianling.High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based de...[A],2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA),2022,2018-July
- [68]Zhai, Jiali, 王德君, Peng, Liang, Lin, Yanhong, 李新勇, Xie, Tengfeng.Visible-light-induced photoelectric gas sensing to formaldehyde based on CdS nanoparticles/ZnO ...[J],SENSORS AND ACTUATORS B CHEMICAL,2022,147(1):234-240
- [69]Jiang, Ying, Wang, Qingpeng, Zhang, Fuzhe, Li, Liuan, Shinkai, Satoko, 王德君, Ao, Jin-Ping.Improvement of device isolation using field implantation for GaN MOSFETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,31(3)
- [70]李硕, 肇启东, 王德君, Xie, Tengfeng.Work function engineering derived all-solid-state Z-scheme semiconductor-metal-semiconductor sy...[J],RSC Advances,2022,6(71):66783-66787
- [71]Zhu, Qiaozhi, 秦福文, Li, Wenbo, 王德君.Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitro...[J],APPLIED PHYSICS LETTERS,2022,103(6)
- [72]Li, Wenbo, 赵纪军, Zhu, Qiaozhi, 王德君.Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics[J],Physical review B Condensed matter and materials physics,2022,87(8)
- [73]Huang, Haiyun, Xu, Yue, 王德君, Wu, Jun, Qin, Huibin, Hu, Yongcai.A compact behavioral simulation model for CMOS vertical hall-effect devices[A],2022,60(1):33-38
- [74]王德君.A Compact Behavioral Simulation Model for CMOS Vertical Hall-effect Devices[J],ECS transactions,2022,60(1):33-38
- [75]Wang, Qingpeng, Tamai, Kentaro, Miyashita, Takahiro, Motoyama, Shin-Ichi, 王德君, Ao, Jin-Ping, Ohno, Yasuo.Influence of Dry Recess Process on Enhancement-Mode GaN Metal-Oxide-Semiconductor Field-Effect ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,52(1,SI)
- [76]王德君.Influence of Dry Recess Process on Enhancement-mode GaN MOSFET[A],4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials,2022,54-54
- [77]Wei, Tiwei, 王谦, Liu, Ziyu, Li, Yinan, 王德君, 王涛, Cai, Jian.A 3D Integration Testing Vehicle with TSV Interconnects[A],14th International Conference on Electronic Materials and Packaging (EMAP),2022
- [78]Huang, Haiyun, Xu, Yue, 王德君, Wu, Jun, Qin, Huibin.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[A],2022,60(1):45-50
- [79]王德君.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[J],ECS transactions,2022,60(1):45-50
- [80]Wu, Qiannan, Xie, Tengfeng, Meng, Dedong, 张玉, Zhao, Qidong, Bu, QiJing, 王德君, Zou, Xiaoxin, Lin, Yanhong, 李硕.Acid-treated Ti4+ doped hematite photoanode for efficient solar water oxidation-Insight into su...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2022,782:943-951