王德君
个人信息Personal Information
教授
博士生导师
硕士生导师
性别:男
毕业院校:清华大学
学位:博士
所在单位:控制科学与工程学院
学科:微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱:dwang121@dlut.edu.cn
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- [41]Huang, Haiyun, Xu, Yue, 王德君, Wu, Jun, Qin, Huibin.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[A],2022,60(1):45-50
- [42]Zhu, Qiaozhi, 秦福文, Li, Wenbo, 王德君.Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance mi...[J],PHYSICA B,2022,432:89-95
- [43]王德君.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation techniqu...[J],ECS transactions,2022,60(1):45-50
- [44]Liu, Bingbing, 秦福文, 王德君.Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-an...[J],APPLIED SURFACE SCIENCE,2022,355:59-63
- [45]杨超, Gu, Zhenghao, Yin, Zhipeng, 秦福文, 王德君.Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors...[J],JOURNAL OF PHYSICS D APPLIED PHYSICS,2022,52(40)
- [46]李硕, 肇启东, Meng, Dedong, 王德君, Xie, Tengfeng.Fabrication of metallic charge transfer channel between photoanode Ti/Fe2O3 and cocatalyst CoOx...[J],Journal of Materials Chemistry A,2022,4(42):16661-16669
- [47]Zhao T., 蔡晶, 李阳, 王琦, 王德君.Integrated passive filters based on silicon substrate for SiP application[A],2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013,2022,510-515
- [48]Jiang, Y., Ohno, Wang, Q. P., Tamai, K., Li, L. A., Shinkai, S., Miyashita, T., Motoyama, S-I, 王德君, Ao, J-P.Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,29(5)
- [49]Huang, Lingqin, Liu, Bingbing, Zhu, Qiaozhi, Chen, Suhua, Gao, Mingchao, 秦福文, 王德君.Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature...[J],APPLIED PHYSICS LETTERS,2022,100(26)
- [50]He, Miao, Du, Shiyu, 王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],International Symposium on Advanced Material Research, ISAMR 2017,2022,753 KEM:134-140
- [51]Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, 苏艳, 秦福文, 王德君.Low-temperature re-oxidation of near-interface defects and voltage stability SiC MOS capacitors[J],APPLIED SURFACE SCIENCE,2022,531
- [52]王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[J],KEY ENGINEERING MATERIALS,2022,753:134-140
- [53]杨超, Zhang, Fanglong, Yin, Zhipeng, 苏艳, 秦福文, 王德君.Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxi...[J],APPLIED SURFACE SCIENCE,2022,488:293-302
- [54]Zhang H.P., Qi R.S., 赵维禄, 章恒丰, 刘国华, 王德君, Niu X.Y., 林茂, Xu L.Y..Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[A],2011 China-Japan Joint Microwave Conference, CJMW 2011,2022,454-457
- [55]Cai, Jian, Wang, Junqiang, 王谦, Liu, Ziyu, 王德君, Seo, Sun-Kyoung, Cho, Tae-Je.Low Temperature Solid-State-Diffusion Bonding for Fine-Pitch Cu/Sn/Cu Interconnect[A],IEEE 65th Electronic Components and Technology Conference (ECTC),2022,2015-July:1616-1623
- [56]徐善国, 张红平, 王德君, 刘国华, Niu, X. Y., 林茂, Xu, L. Y..Forward Block characteristic of a novel RF SOI LDMOS with a Buried P-type layer[A],International Silicon on Insulator (SOI) Conference,2022
- [57]王德君.Temperature dependency of GaN MOSFETs on AlGaN/GaN heterostructure[A],the 40th International Symposium on Compound Semiconductors,2022
- [58]王德君.Forward Block characteristic of a novel SOI LDMOS with a Buried P-type layer[A],2010 IEEE International SOI Conference,2022,88-89
- [59]Huang, Lingqin, 王德君.Temperature dependent electrical characteristics of Pt Schottky barriers fabricated on lightly ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,54(11)
- [60]王德君.GaN MOSFET with Boron Trichloride-Based Dry Recess Process[A],11th APCPST (Asia Pacific Conference on Plasma Science and Technology),2022,66-66