Title of Paper:I-V characteristics of the p-n junction between vertically aligned ZnO nanorods and polyaniline thin film

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Date of Publication:2010-03-01

Journal:SYNTHETIC METALS

Included Journals:SCIE、EI

Volume:160

Issue:5-6

Page Number:499-503

ISSN No.:0379-6779

Key Words:p-n junction; ZnO nanorods; Polyaniline

Abstract:The characteristics of the p-n junction between vertically aligned ZnO nanorods and polyaniline (PANI) thin film were investigated. The rectifying behavior of the I-V curve of ZnO/PANI diode was verified with assembled ZnO/PANI structures. The cut-in voltage of the p-n junction was found to be around 0.5 V and the reverse breakdown voltage was about -27V. In addition, the effects of UV illumination and NH3 exposure on the I-V characteristics of ZnO/PANI configuration were also investigated. (C) 2009 Elsevier B.V. All rights reserved.