location： Current position: Home >> Scientific Research >> Paper Publications

Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Hits:

Indexed by:期刊论文

Date of Publication:2012-01-01

Journal:thin solid film

Volume:521

Issue:10

Page Number:181-184

Pre One:Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping

Next One:Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep