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Indexed by:期刊论文
Date of Publication:2012-02-01
Journal:CRYSTAL RESEARCH AND TECHNOLOGY
Included Journals:SCIE、EI、Scopus
Volume:47
Issue:2
Page Number:207-212
ISSN No.:0232-1300
Key Words:GaN; nanowires
Abstract:In this work, P-doped GaN nanowires were synthesized in a co-deposition CVD process and the effects of P-doping on the microstructure and cathodoluminescence (CL) of GaN nanowires were studied in details. SEM observation and CL measurments demonstrated that P-doping has led to a rough morphology evolution and a depression of the band-gap emission of GaN nanowires, whereas the visible emission of GaN nanowires was obviously enhanced. Finally, the corresponding morphology transition and optical properties of GaN nanowires with P-doping were discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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