NAME

Qin Fuwen

Paper Publications

Publishers Note: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma [Appl. Phys. Lett. 104, 202101 (2014)]
  • Hits:
  • Indexed by:

    期刊论文

  • First Author:

    秦福文

  • Co-author:

    王德君

  • Date of Publication:

    2014-01-01

  • Journal:

    Applied Physics Letters

  • Document Type:

    J

  • Volume:

    104

  • Issue:

    26

  • Page Number:

    269902-269902

Pre One:Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD

Next One:Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:

Open time:..
The Last Update Time:..