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Indexed by:期刊论文

Date of Publication:2014-01-15

Journal:JOURNAL OF ALLOYS AND COMPOUNDS

Included Journals:SCIE、EI

Volume:583

Page Number:39-42

ISSN No.:0925-8388

Key Words:Gallium nitride (GaN); Glass substrate; Plasma-enhanced metal organic chemical; vapor deposition system (ECR-PEMOCVD); Low temperature growth

Abstract:A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crystalline GaN films with atomically smooth surface were achieved on amorphous Ni/glass substrate at an extremely low temperature of similar to 480 degrees C. This GaN/Ni/glass structures have great potential for dramatically improve the scalability and cost of solid-state lighting, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique. (C) 2013 Elsevier B. V. All rights reserved.