location： Current position: Home >> Scientific Research >> Paper Publications

碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展

Hits:

Indexed by:期刊论文

Date of Publication:2016-01-01

Journal:智能电网

Volume:6

Issue:1

Page Number:12-17

Pre One:Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

Next One:氮氢混合等离子体处理对SiC MOS电容可靠性的影响
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep