Current position: Home >> Scientific Research >> Paper Publications

碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展

Release Time:2019-03-12  Hits:

Indexed by: Journal Article

Date of Publication: 2016-01-01

Journal: 智能电网

Volume: 6

Issue: 1

Page Number: 12-17

Prev One:Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

Next One:氮氢混合等离子体处理对SiC MOS电容可靠性的影响