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Indexed by:期刊论文

Date of Publication:2016-02-28

Journal:APPLIED SURFACE SCIENCE

Included Journals:SCIE、EI、Scopus

Volume:364

Page Number:769-774

ISSN No.:0169-4332

Key Words:SiC semiconductor; SiO2/SiC interface; Density of interface traps; Surface pretreatment; Surface states

Abstract:We proposed an electron cyclotron resonance microwave hydrogen-nitrogen mixed plasma (HNP) pretreatment for 4H-SiC surface combined with post-oxidation annealing (POA) to improve the SiO2/SiC interface properties. Results revealed that HNP surface pretreatment effectively reduced the density of interface traps (D-it), which was closely correlated with interface flattening because of surface flattening, surface state (contaminants, adsorbates, and dangling bonds) reduction, and suppressed generation of interface defects during oxidation. Combined with POA, D-it was further decreased because of passivation of the formed defects after oxidation. The correlation among passivation, SiC surface properties, SiO2/SiC interface properties, and defect levels was established. (C) 2015 Elsevier B.V. All rights reserved.