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Date of Publication:2022-10-08
Journal:JOURNAL OF APPLIED PHYSICS
Volume:125
Issue:18
ISSN No.:0021-8979
Pre One:Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
Next One:Plasma pretreatment of GaAs substrates and ECR-PAMOCVD of cubic GaN
