Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
Release Time:2022-10-08 Hits:
Date of Publication: 2022-10-07
Journal: APPLIED SURFACE SCIENCE
Volume: 364
Page Number: 769-774
ISSN: 0169-4332