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Date of Publication:2022-10-07
Journal:Chinese Physics B
Volume:26
Issue:3
ISSN No.:1674-1056
Pre One:Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
Next One:Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
