Current position: Home >> Scientific Research >> Paper Publications

Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study

Release Time:2022-10-08  Hits:

Date of Publication: 2022-10-07

Journal: Chinese Physics B

Volume: 26

Issue: 3

ISSN: 1674-1056

Prev One:Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Next One:Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Browse on mobile