Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
Release Time:2022-10-08 Hits:
Date of Publication: 2022-10-07
Journal: APPLIED SURFACE SCIENCE
Volume: 560
ISSN: 0169-4332
Key Words: "Ta2O5 RRAM; Si dopant; Oxygen vacancy; Conductive filament; First principle"