用N_2-H_2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响(英文)
Release Time:2022-10-08 Hits:
Date of Publication: 2022-10-06
Journal: 发光学报
Issue: S1
Page Number: 24-28
ISSN: 1000-7032
Note: 新增回溯数据
Release Time:2022-10-08 Hits:
Date of Publication: 2022-10-06
Journal: 发光学报
Issue: S1
Page Number: 24-28
ISSN: 1000-7032
Note: 新增回溯数据