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Indexed by:期刊论文
Date of Publication:2009-08-15
Journal:半导体光电
Included Journals:Scopus、PKU、ISTIC、CSCD
Volume:30
Issue:4
Page Number:558-561
ISSN No.:1001-5868
Key Words:ECR-PECVD;氮化硅薄膜;沉积速率;表面形貌
Abstract:/min.薄膜的粗糙度随着衬底温度和微波功率的增加而降低,粗糙度最低为0.89 nm,说明薄膜的表面质量较高.
