DALIAN UNIVERSITY OF TECHNOLOGY
Login
中文
Home
Scientific Research
Research Projects
Published Books
Patents
Paper Publications
Research Field
Teaching Research
Teaching Achievement
Teaching Information
Teaching Resources
Awards and Honours
Other Rewards
Academic Honor
Scientific Awards
Enrollment Information
Student Information
My Album
Blog
Current position:
Home
>>
Scientific Research
>>
Paper Publications
Qin Fuwen
Personal Information
Associate Professor Supervisor of Master's Candidates
Paper Publications
[141]秦福文.Influence of N2 flux on film deposition on sapphire(0001) substrates by ECR-PEMOCVD[J],中国物理快报(英文版),2011,28(2):281021-281024
[142]秦福文, 边继明, 吴爱民.The Preparation and Charateristics of InxGa1-xN(0.06 ≤x≤ 0.58) Films[J],中国物理快报,2011,28(10):108104-108104
[143]白亦真, 秦福文, 边继明.Deposition and properties of highly C-oriented GaN films[J],Applied physics A,2011,102(2):353-358
[144]秦福文, 白亦真, 边继明.Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on Diamond Substrates[J],Vacuum,2011,85(7):725-729
[145]张东, 秦福文, 白亦真, 王健, 周志峰, 于博.Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on[J],Vacuum,2011,85(7):725-729
[146]刘胜芳, 秦福文, 吴爱民, 姜辛, 徐茵, 顾彪, Liu, S., Key Lab. of Materials Modification by Laser, Ion, Electron Beam, Dalian University of Technology, Dalian 116023, China, email: lsf1201@yahoo.com.cn.在镀铝玻璃衬底上低温沉积GaN薄膜的结晶特性[J],半导体光电,2010,31(4):557-562
[147]Wu, A. M., Yue, H. Y., Zhang, X. Y., Qin, F. W., Li, T. J., Jiang, X..Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperat...[A],2010,654-656:1712-+
[148]Qin, Fu-Wen, Wu, Ai-min, Liu, Feng-chun, Bao-dan, Jiang, Xin.Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method[A],2010,654-656:1716-+
[149]陈伟绩, 秦福文, 吴爱民, 刘胜芳, 杨智慧, 姜辛, 李帅, 董武军, Qin, F.(qfw@dlut.edu.cn).TMGa流量对玻璃衬底上低温沉积GaN的影响[J],真空科学与技术学报,2010,30(4):445-449
[150]杨智慧, 秦福文, 吴爱民, 宋世巍, 刘胜芳, 陈伟绩, Qin, F.-W.(qfw@dlut.edu.cn).ZnO:Al衬底上低温生长GaN薄膜[J],人工晶体学报,2010,39(2):299-303
total172 15/18
first
previous
next
last
Page