Current position: Home >> Scientific Research >> Patents

一种β-碳化硅薄膜的制备方法

Hits:

First Author:Jiming Bian

Disigner of the Invention:张志坤,毕凯峰,liuyanhong,liuweifeng,Qin Fuwen

Application Number:CN201310293452.9

Authorization Date:2013-07-13

Authorization number:CN103346073A

Pre One:ZnO-GaN复合衬底GaN发光器件及其制备方法

Next One:一种降低SiO<sub>2</sub>/SiC界面态密度的方法