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一种降低SiO<sub>2</sub>/SiC界面态密度的方法

Release Time:2019-03-09  Hits:

First Author: Dejun WANG

Disigner of the Invention: Qin Fuwen,李青洙

Application Number: CN201510671058.3

Authorization Date: 2015-10-15

Authorization Number: CN105304498A

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