Current position: Home >> Scientific Research >> Patents

一种SiC MOSFET器件低温稳定性的评价测试方法

Hits:

First Author:Dejun WANG

Disigner of the Invention:孙雨浓,杨超,Qin Fuwen

Application Number:CN201811163919.7

Authorization Date:2018-10-03

Authorization number:CN109270423A

Pre One:一种石墨衬底上的氧化锌基MOS器件

Next One:AlN/GaN/自持金刚石结构SAW器件及制备方法