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一种SiC MOSFET器件低温稳定性的评价测试方法

Release Time:2019-10-10  Hits:

First Author: Dejun WANG

Disigner of the Invention: Qin Fuwen,杨超,孙雨浓

Application Number: CN201811163919.7

Authorization Date: 2018-10-03

Authorization Number: CN109270423A

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