Hits:
First Author:Jiming Bian
Disigner of the Invention:张志坤,Qin Fuwen,liuweifeng,Luo Yingmin
Application Number:CN201310018911.2
Authorization Date:2013-01-18
Authorization number:CN103107205A
Pre One:ZnO-GaN复合衬底GaN发光器件及其制备方法
Next One:一种SiC MOSFET器件低温稳定性的评价测试方法