Current position: Home >> Scientific Research >> Patents

一种提高SiC MOSFET器件性能稳定性的制作方法

Release Time:2019-10-10  Hits:

First Author: Dejun WANG

Disigner of the Invention: 尹志鹏,杨超,Qin Fuwen

Application Number: CN201810796522.5

Authorization Date: 2018-07-19

Authorization Number: CN109003895A

Prev One:柔性透明聚酰亚胺衬底上的氮化铟镓薄膜及其制备方法

Next One:一种提高SiC MOSFET器件高、低温稳定性的钝化方法
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Browse on mobile