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一种提高SiC MOSFET器件高、低温稳定性的钝化方法

Release Time:2019-10-10  Hits:

First Author: Dejun WANG

Disigner of the Invention: Qin Fuwen,杨超,孙雨浓

Application Number: CN201811163899.3

Authorization Date: 2018-10-03

Authorization Number: CN109103078A

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