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一种提高SiC MOSFET器件高、低温稳定性的钝化方法

Release Time:2022-10-19  Hits:

First Author: Dejun WANG

Disigner of the Invention: 孙雨浓,杨超,Qin Fuwen

Institution: 电子信息与电气工程学部

Application Number: CN109103078A

Authorization Number: CN201811163899.3

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