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一种提高SiC MOSFET器件性能稳定性的制作方法

Release Time:2022-10-19  Hits:

First Author: Dejun WANG

Disigner of the Invention: Qin Fuwen,杨超,尹志鹏

Institution: 电子信息与电气工程学部

Application Number: CN109003895A

Authorization Number: CN201810796522.5

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