Current position: Home >> Scientific Research >> Patents

采用金属基片制备垂直GaN基LED芯片的设备

Release Time:2022-10-19  Hits:

First Author: Qin Fuwen

Disigner of the Invention: Lin Guoqiang,刘勤华

Institution: 物理学院

Application Number: CN102751399B

Prev One:一种降低SiC MOS界面态密度的表面预处理方法

Next One:金属基片垂直GaN基LED芯片及其制备方法
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Browse on mobile